Tip122 pdf

Tip122 pdf

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Application. The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Features Content. Features. Complementary to TIP// Equivalent Circuit TIP TIP TIP RevTypical Performance Characteristics FigureDC Current Gain FigureBase-Emitter Saturation Voltage and Collector-Emitter Saturation PRODUCT STATUS DEFINITIONSA critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause Description: NPN Epitaxial Darlington Transistor. Features. Applications. TIP, TIP, TIP TIP, TIP, TIP Complementary power Darlington transistors. Manufacturer: Fairchild Semiconductor The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. hFE = (Typ) @ IC = Adc f/Patent− ON Semiconductor reserves the right to make changes without further notice The TIP is a silicon NPN Darlington transistor in a TO− type package designed for general purpose amplifier and low−speed switching applications. Vceo = Vdc, Vcb = Vdc, Veb = 5Vdc, Ic = Features. High NPN, silicon darlington power transistor. General purpose linear and switchingDescription. The resulting transistors show exceptional high gain TIP ICEO Collector Cut-Off Current TIP VCE =V, IB = TIP VCE =V, IB =mA TIP VCE =V, IB =ICBO Collector Cut-Off Current TIP VCB =V, IE =TIP VCB =V, IE =mA TIP VCB = V, IE =IEBO Emitter Cut-Off Current VEB =V, IC =mA hFE DC Current Gain The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration TIP, TIP, TIP (NPN); TIP, TIP, TIP (PNP) Designed for general−purpose amplifier and low−speed switching applications. TIP, TIP, TIP (NPN); TIP, TIP, TIP TIP Product details. Description. Low collector-emitter saturation voltage Complementary NPNPNP transistorsApplications. hFE The TIP is a silicon NPN Darlington transistor in a TO− type package designed for general purpose amplifier and low−speed switching applications. High DC Current Gain −. High DC Current Gain −. Features TIPComplementary Power Transistors. General purpose linear and switching Features. Low collector-emitter saturation voltage. Medium Power Linear Switching Applications. Plastic Medium-Power Complementary Silicon Transistors. Features. Features. TIP, TIP, TIP (NPN); TIP, TIP, TIP (PNP) Plastic Medium-Power Complementary Silicon Transistors. Designed for use in general-purpose low-speed switching and amplifier applications. High DC Current Gain −. Designed for general−purpose amplifier and low−speed switching applications. Complementary NPNPNP transistors. Features. General purpose linear and switching. hFE = (Typ) @ IC = Adc The devices are manufactured in planar technology with \base island\ layout and monolithic Darlington configuration. Complementary NPNPNP transistors. Designed for general−purpose amplifier and low−speed switching applications. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Plastic Medium-Power Complementary Silicon Transistors designed for general–purpose amplifier and low–speed switching applications. Low collector-emitter saturation voltage. Low collector-emitter saturation voltage NPN Epitaxial Darlington Transistor.