Pn junction pdf
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Pn junction pdf
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In analogy to thermal equilibrium, this quasi This represents ohms of resistance (1 volt/5mA = ohms). D. p,n = diffusion constant or the diffusivity of carriers (holes and electrons) – Drift – carrier drift occurs due to an electric field applied across a piece of silicon. Notice that when the forward-bias voltage was tripled (1 volt tovolts), the current increasedtimes (5mA tomA) Gonzaga University UW Nanotechnology Modeling LaboratoryUW Nanotechnology Modeling Laboratory n dx. In this specific quasi-equilibrium state this constant will be larger than ni 2, the pn-product in thermal equilibrium. The field accelerates the carriers (electrons or holes) and acquire a velocity, called drift velocity, dependent on a constant called mobility μ. p,n Alan Doolittle − =ln ln () () ln i A D bi A i D p n bi n N N q kT V N n N q kT n x n x q kT V Movement of electrons and holes when forming the pn is constant. However, at point B the voltage isvolts and the current ismilliamperes. This results inohms of resistance for the diode. Georgia Tech ECEDr.
