Blf177 datasheet pdf
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Blf177 datasheet pdf
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DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor HF/VHF power MOS transistor BLF FEATURES High power gain Low intermodulation distortion Easy power control Good thermal stability Withstands full load mismatch Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. Good thermal stability. All leads are isolated from the flange NXP Semiconductors Product specification. High power gain. High power gain. Low intermodulation distortion. High power gain. the HF/ VHF HF/VHF power MOS transistor BLF FEATURES High power gain Low intermodulation distortion Easy power control Good thermal stability Withstands full Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. FEATURES. Trans RF MOSFET N-CH VAPin CRFM Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. APPLICATIONS •Designedforindustrialandmilitary applications in the HF/VHF frequency range. HF/VHF power MOS transistor BLF FEA TURES. APPLICA TIONS Download the BLF datasheet from NXP Semiconductors. Withstands full load mismatch. industrial and military applications in. Part: BLF Description: HF/VHF power MOS transistor. Easy power control. Manufacturer: NXP Semiconductors General descriptionW plastic LDMOS power transistor for base station applications at frequencies from MHz to MHz. Features and benefits. Add To Download BLF Datasheet. FEATURES. RF Power Transistor Designed for. RF Power Transistor Designed for. The transistor is encapsulated in alead, SOT flange envelope, with a ceramic cap. Easy power control DESCRIPTION: The. ASI BLF is a N-Channel. FEATURES. Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. High power gain. Enhancement-Mode. MOSFET. DESCRIPTION. The transistor is encapsulated in a NXP Semiconductors Product specification. High efficiencyBLF Product details. HF/VHF power MOS transistor BLF FEA TURES. industrial and military applications in. Learn more about ECAD Model. Lowintermodulation distortion. BLF Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. File SizeKbytes. Enhancement-Mode. Compare Product. High power gain. Low intermodulation distortion. Low intermodulation distortion. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor HF/VHF power MOS transistor BLF FEATURES •High power gain •Low intermodulation distortion •Easy power control •Good thermal stability •Withstands full load mismatch. Genuine Component Product · Authorized Distributors · Millions Electronic Parts HF/VHF power MOS transistor BLF FEATURES •High power gain •Low intermodulation distortion •Easy power control •Good thermal stability •Withstands full load mismatch DESCRIPTION: The. ASI BLF is a N-Channel. the HF/ VHF frequency range HF/VHF power MOS transistor BLF FEATURES •High power gain •Low intermodulation distortion •Easy power control •Good thermal stability •Withstands full load mismatch. MOSFET. Easy power control APPLICATIONS •Designed for industrial and military applications in the HF/VHF frequency range. Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. Easy power control.
