Bc547 pdf

Bc547 pdf

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pnp complements: bc556 and bc557. similar description - bc547. ta = 25° c unless otherwise noted. product overview. bc847/ bc547 series. • complement to bc556, bc557, bc558, bc559, and bc560. npn general- purpose transistors in small plastic packages. bc547 datasheet ( pdf) - fairchild semiconductor. complement to bc556, bc557, bc558, bc559, and bc560. description: amplifier transistors ( npn silicon). description: switching and amplifier. 5 12 w mw/ ° c operating and. • high- voltage: bc546, vceo = 65 v. discrete power & signal. current– gain – bandwidth product ic, collector current ( madc) 0. marking: full part number. bc546 bc547 bc548 bc549 bc550 - npn epitaxial silicon transistor author: fairchild semiconductor subject: bc546 bc547 bc548 bc549 bc550 - npn epitaxial silicon transistor keywords: bc546, bc547, bc548, bc549, bc550, npn epitaxial silicon transistor created date: 3: 50: 45 pm. manufacturer: on semiconductor. [ 1] / dg: halogen- free. rating bc547 pdf symbol bc546 bc547 bc548 unit collector– emitter voltage vceovdc collector– base voltage vcbovdc emitter– base voltage vebo 6. npn epitaxial silicon transistor. npn general purpose transistors bc546; bc547 features • low current ( max. high− voltage: bc546, vceo = 65 v low− noise: bc549, bc550. 1 general description. bc547 bc548 vceovdc collector - base voltage bc546 bc547 bc548 vcbovdc emitter - base voltage vebo 6. npn transistor in a to- 92; sot54 plastic package. description npn transistor in a to- 92; sot54 plastic package. these are pb− free devices. description: the central semiconductor bc546, bc547, bc548 series devices are silicon npn small signal transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. bc547 product details. 1 simplified outline. • pb− free packages are available* maximum ratings. amplifier transistors ( npn silicon) file size. pinning pin description 1 emitter 2 base 3 collector fig. total device dissipation @ tc = 25° c pd 1. high- voltage: bc546, vceo = 65 v. file size: 140kbytes. manufacturer: fairchild semiconductor. bc547 datasheet ( html) - fairchild semiconductor. functional operation above the recommended operating conditions is not implied. total device dissipation @ ta = 25° c pd 625 mw derate above 25° c 5. bc547 datasheet ( pdf) - on semiconductor. capacitances vr, reverse voltage ( volts) 10 figure 6. switching and amplifier. high voltage: bc546, vceo= 65v. • general purpose switching and amplification. 0 mw mw/ ° c total device dissipation @ tc = 25° c derate above 25° c pd 1. to- 92- 18r case. low noise: bc549, bc550. applications • general purpose switching and amplification. low- noise: bc549, bc550. absolute maximum ratings ta= 25° c unless otherwise noted. stresses exceeding maximum ratings may damage the device. • low- noise: bc549, bc550. switching and applications. file size: 151kbytes. sourced from process 10. 45 v, 100 ma npn general- purpose transistors. collector - base voltage vcbo vdc. 0 vdc collector current — continuous ic 100 madc total device dissipation @ ta = 25° c derate above 25° c pd 625 5. this device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 ma. npn general purpose amplifier. emitter - base voltage vebo 6. • switching and amplifier. 5 derate above 25° c 12. see pn100a for characteristics. we would like to show you a description here but the site won’ t allow us. • low current ( max. 07 — 10 december product data sheet. bc546 / bc547 / bc548 / bc549 / bc550. thermal characteristics. maximum ratings are stress ratings only. created date: 11: 43: 02 am. bc547/ bc548 figure 5. bc546/ 547/ 548/ 549/ 550 npn epitaxial silicon transistor. 0 vdc collector current − continuous ic 100 madc total device dissipation @ ta = 25° c derate above 25° c pd 625 5. collector current − continuous ic 100 madc. absolute maximum ratings*. complement to bc556. [ 2] also available in sot54a and sot54 variant packages ( see section 2). 100 ma) • bc547 pdf low voltage ( max.